PART |
Description |
Maker |
IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
|
IDT Integrated Device Technology, Inc.
|
CY7C1305AV18 CY7C1305AV18-100BZC CY7C1305AV18-133B |
18-Mb Burst of 4 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
K7A803609A K7A801809A |
256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet 512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
IDT71P79804 IDTIDT71P79104250BQI IDTIDT71P79104267 |
18Mb Pipelined DDR垄芒II SIO SRAM Burst of 2 18Mb Pipelined DDR?II SIO SRAM Burst of 2
|
Integrated Device Technology
|
IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出,脉冲计数器,单周期取消
|
Integrated Device Technology, Inc.
|
K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
AS7C252MPFS18A AS7C252MPFS18A_V1.3 AS7C252MPFS18A- |
Sync SRAM - 2.5V From old datasheet system 2.5V 2M x 18 pipelined burst synchronous SRAM 2M X 18 STANDARD SRAM, 3.1 ns, PQFP100 2.5V 2M x 18 pipelined burst synchronous SRAM 2M X 18 STANDARD SRAM, 3.8 ns, PQFP100
|
Alliance Semiconductor ... ALSC Alliance Semiconductor Corporation Alliance Semiconductor, Corp. INTEGRATED SILICON SOLUTION INC
|
IDT71V67802150BQI IDT71V67802150BG IDT71V67602150P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线,单周期取 256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
|
Integrated Device Technology, Inc.
|
MC8051M36 |
SYMMETRIC PIPELINED BURST SRAM
|
Electronic Theatre Controls, Inc.
|
CY7C1303BV25-100BZXC CY7C1306BV25-100BZXC |
18-Mbit Burst of 2 Pipelined SRAM with QD(TM) Architecture
|
Cypress
|
IDT71V25761S166PFI8 |
3.3V 128K x 36 Synchronous PipeLined Burst SRAM with 2.5V I/O
|
IDT
|